Quantum conductance and electrical resistivity

Conductance in quantum wires by three quantum dots arrays

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

Conductance in quantum wires by three quantum dots arrays

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

ELECTRICAL RESISTIVITY OF NpTe

Electrical resistivity and tunneling anomalies in CeCuAs2

The compound CeCuAs2 is found to exhibit negative temperature (T) coefficient of electrical resistivity (ρ) under ambient pressure conditions in the entire T-range of investigation (45 mK to 300 K), even in the presence of high magnetic fields. Preliminary tunneling spectroscopic measurements indicate the existence of a psuedo-gap at least at low temperatures, thereby implying that this compoun...

Morphology and electrical resistivity of metallic nanostructures

The electrical resistivity r of Au, Al and Cu films prepared by thermal evaporation with thickness range from 3 to 100 nm on glass substrates were studied. The r value was measured and theoretically evaluated by the Fuchs–Sondheimer (F–S), the Mayadas–Shatzkes (M–S), and the combined models. Measured r values in Al films were about seven times minor than for Au and Cu films for the minimum (3 n...